Resistive shunt ESD and EOS protection for recording heads

摘要

In a magnetic read/write assembly, the magnetoresistive (G)MR sensor element is protected against electrostatic discharge (ESD) and electrical overstress (EOS) by using a low resistance bypass. The low resistance bypass shunts current away from the magnetoresistive sensor element during an ESD or EOS event. This low resistance bypass is made up of two or more resistors connected in series, and positioned in parallel to the magnetoresistive sensor element. The use of electronic circuitry to temporarily disable this low resistance bypass allows the magnetoresistive sensor element to be tested during manufacturing. The low resistance bypass is removed prior to placing the (G)MR head into operation in the magnetic storage system or at any other desired step in the manufacturing process.