发明名称 |
Nonvolatile memory cell, method of programming the same and nonvolatile memory array |
摘要 |
Provided in the present invention are a high speed and low program voltage nonvolatile memory cell, a programming method for same and a nonvolatile memory array. A nonvolatile memory cell comprises a first gate insulator formed on a surface of a first channel forming semiconductor region adjacent to a source region; a second gate insulator formed on a surface of a second channel forming semiconductor region adjacent to a drain region; a first gate electrode formed on said first gate insulator; and a second gate electrode formed on said second gate insulator wherein the second gate insulator includes a first layer forming a potential barrier at the interface with the second channel forming region; a third layer forming a potential barrier at the interface with the second gate electrode and the second layer between the first and third layers forming a carrier trapping level.
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申请公布号 |
US6399441(B1) |
申请公布日期 |
2002.06.04 |
申请号 |
US20010861489 |
申请日期 |
2001.05.21 |
申请人 |
HALO LSI DEVICE & DESIGN TECHNOLOGY, INC. |
发明人 |
OGURA SEIKI;HAYASHI YUTAKA |
分类号 |
G11C16/02;G11C16/04;H01L21/28;H01L21/336;H01L21/8247;H01L27/115;H01L27/12;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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