发明名称 METHOD OF INSPECTING AN ANISOTROPIC ETCH IN A MICROSTRUCTURE
摘要 <p>A method is disclosed for evaluating an anisotropic etch in a microstructure. First a film is formed on a substrate. Next a series of holes of progressively different area and having specific geometric shapes are formed through the film. An anisotropic etch is carried out in the microstructure through the holes by relying on different etch rates in different crystal planes under known and reproducible conditions. Finally, the microstructure is inspected through the holes after the anisotropic etch to compare results from holes of different area. The method is useful in the determination of etch depth.</p>
申请公布号 WO2002041388(A2) 申请公布日期 2002.05.23
申请号 CA2001001627 申请日期 2001.11.15
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址
您可能感兴趣的专利