| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of forming a photovoltaic element having higher photoelectric conversion characteristics, which can control the amount of boron which is taken in a silicon layer, specially facilitates formation of a desired p+ layer even at a lower reprecipitation temperature and moreover, enables formation of a high-quality silicon layer, and to provide a formed photovoltaic element, a method of forming a semiconductor substrate and a semiconductor substrate. SOLUTION: A method of forming the photovoltaic element is characterized by comprising a process that a silicon thin film 104 is formed on the surface of a crystalline silicon substrate 103 using a high-frequency plasma CVD method, a process that after the substrate 103 formed with the thin film 104 is dissolved in a metal solvent 106, a silicone in the solvent 106 is precipitated on the surface of the substrate 103 to form a first silicon layer 107, a process that a second silicon layer 110 is formed on the layer 107 by a liquid phase growth method using indium and a process that electrodes are formed.</p> |
