| 摘要 |
PURPOSE: An etching method of metal lines is provided to prevent an undercut by preventing side etching of metal film using a dummy pattern. CONSTITUTION: First, a mask having metal patterns and dummy patterns is prepared. In the mask, the dummy pattern is spaced apart from the metal pattern. That is, the spaced distance is about 2 time more than compared to the width of the metal pattern. After depositing a metal film on an insulating layer(11), metal lines(12) are formed by selectively etching the metal film. At this time, a dummy pattern(13) is simultaneously formed on the insulating layer by using the mask.
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