| 摘要 |
In a semiconductor apparatus having a dielectric isolation substrate formed by laminating a first oxide film on a first or second conductivity type first semiconductor substrate and laminating a first conductivity type second semiconductor substrate on the first oxide film, a trench is formed through the second semiconductor substrate down to the first oxide film, and a surface of the second semiconductor substrate that defines the trench is covered with a second oxide film. The trench is filled with a polycrystalline semiconductor material so as to provide a dielectric isolation region, and the second semiconductor substrate is divided by the trench into a plurality of isolated regions. In this semiconductor apparatus, at least a lateral insulated gate bipolar transistor and a lateral diode are formed in the same one of the isolated regions. In another embodiment, at least a lateral insulated gate bipolar transistor and a lateral MOSFET are formed in the same isolated region.
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