Ion source used in plasma deposition, implantation and ion etching of microstructures comprises gas volumes on either side of a separating wall to form a pressure difference between the gas volumes

摘要

Ion source comprises a first and a second gas volume (21, 22) on a first and second side of a separating wall (11) to form a pressure difference between the gas volumes. Gas flows from the first volume to the second volume through an opening (1) in the wall and is ionized in a gas discharge. An Independent claim is also included for a device comprising one or more ion sources, a vacuum chamber and a number of vacuum pumps. Preferred Features: The separating wall comprises a dielectric base layer, an electrically conducting first layer on the first side of the base layer and an electrically conducting second layer on the second side of the base layer. An electrical field strength of at least 10<4>, 10<5>, 10<6>, 10<7> or 10<8> V/cm is produced in the region of the opening. The gas is a mixed gas (He + Kr).