| 摘要 |
PURPOSE: An isolation method of a semiconductor device is provided to be capable of preventing bird's beak and lateral diffusion and simplifying manufacturing processes. CONSTITUTION: The first layer(21) composed of the first silicon oxide(21-1) and the first silicon nitride(21-2), the second layer(22) made of the second silicon oxide(22-1) and the third layer(23) made of the second silicon nitride(23-1), are sequentially formed on a semiconductor substrate(20). After exposing the first layer(21) of an isolation region(A') by selectively etching the third and second layer, a spacer(24) is formed at both sidewalls the etched second and third layer. After removing the exposed first layer(21), a trench is formed. Channel stop ions are implanted into the bottom of the trench. The second layer(22) is partially removed by under-cut. Then, a field oxide layer(25) is formed.
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