| 摘要 |
PURPOSE: A controlled method for depositing silicon-rich oxide using HDP-CVD and its apparatus are provided to achieve increased consistency in layer uniformity. CONSTITUTION: A high density plasma chemical vapor deposition(HDP-CVD) system(10) in which a dielectric layer can be deposited. The system(10) includes a chamber(13), a vacuum system(70), a source plasma system(80A), a bias plasma system(80B), a gas delivery system(33), and a remote plasma cleaning system(50). The upper portion of chamber(13) includes a dome(14), which is made of a ceramic dielectric material, such as aluminum oxide or aluminum nitride. Dome(14) defines an upper boundary of a plasma processing region(16). Plasma processing region(16) is bounded on the bottom by the upper surface of a substrate(17) and a substrate support member(18). A heater plate(23) and a cold plate(24) surmount, and are thermally coupled to, dome(14). Heater plate(23) and cold plate(24) allow control of the dome temperature to within about +/- 10 deg.C over a range of about 100 deg.C to 200 deg.C. This allows optimizing the dome temperature for the various processes.
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