| 摘要 |
PROBLEM TO BE SOLVED: To form a waveguide film by superior workability and high film- formation speed and dispense with high heat treatment by reacting oxygen gas, organic silicon compound gas, and organic metal gas with each other in a vacuum container in an induction coupling high frequency plasma state. SOLUTION: Oxygen gas, organic silicon compound gas, and organic metal gas are introduced in a vacuum container 30 where a substrate 12 is placed and the oxygen gas, the organic silicon compound gas, and the organic metal gas are reacted with each other in the vacuum container 30 in an induction coupling high frequency plasma state so that a silicon oxide formed by doping the metal element contained in the organic metal gas is formed on the substrate 12 as a waveguide film. The organic metal gas is alkoxide containing at least one kind of element out of Ge, Ti, P, B, Al, Er, As, Ga, S, Sn, and Zn. The refraction index of the waveguide film is set by adjusting the induction quantity rate of the organic silicon compound gas to the organic metal gas in the vacuum container. |
