发明名称 |
GaAs SEMICONDUCTOR POWER SUPPLY DEVICE OPERABLE WITH LOW-VOLTAGE POWER SUPPLY AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device by which the influx of the parasitic carrier at the interface between a substrate and a buffer layer to a channel layer can be prevented, and to provide a method for manufacturing the semiconductor device. SOLUTION: A first GaAs buffer layer 10A which is not doped is formed on a semi-insulating GaAs substrate 70, and a superlattice layer 80 is formed on the first GaAs buffer layer 10A. A second GaAs buffer layer 10B which is of the identical material with the first GaAs buffer layer 10A and is not doped is formed on the superlattice layer 80. A channel layer 20 is formed on the second GaAs buffer layer 10B, and a surface protecting film 30 is formed on the channel layer 20.
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申请公布号 |
JP2002124523(A) |
申请公布日期 |
2002.04.26 |
申请号 |
JP20010306688 |
申请日期 |
2001.10.02 |
申请人 |
KOREA ELECTRONICS TELECOMMUN |
发明人 |
LEE JONG-LAM;KIM HAE-CHEON;MUN JAE-KYOUNG;PARK HYUNG-MOO |
分类号 |
H01L29/812;H01L21/338;H01L21/76;H01L21/8252;H01L29/10;H01L29/45;(IPC1-7):H01L21/338 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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