METHOD FOR MANUFACTURING SINGLE CRYSTAL INGOT AND METHOD FOR MANUFACTURING WAFER USING THE SINGLE CRYSTAL INGOT

摘要

PURPOSE: A method for manufacturing a single crystal ingot is provided to manufacture a wafer which is sliced slantly to a crystal growing axis direction of the single crystal ingot in certain degrees of an angle, and a method for manufacturing the wafer using the single crystal ingot is provided. CONSTITUTION: In a method for manufacturing a single crystal ingot having a certain length(L2) by slicing a rod shaped single crystal body having a certain diameter(R2), the method for manufacturing the single crystal ingot is characterized in that the single crystal ingot is formed by slicing the rod shaped single crystal body to two or more pieces so that a slicing angle of the single crystal body is inclined to a crystal growing axis direction as much as certain degrees of an angle(&thgr;2), and a slicing surface of the single crystal ingot is formed so that it is inclined to a crystal growing axis direction as much as certain degrees of an angle(&thgr;2). The method for manufacturing a wafer comprises the steps of forming a single crystal ingot in which a slicing surface is inclined to a crystal growing axis direction as much as certain degrees of an angle(&thgr;2) by slicing a rod shaped single crystal body having a certain diameter(R2) to two or more pieces so that a slicing angle of the single crystal body is inclined to a crystal growing axis direction as much as certain degrees of an angle(&thgr;2); adhering a beam onto one outer circumferential surface of the single crystal ingot; fixing the single crystal ingot by adhering the surface of one end of the single crystal ingot to a fixing block; and forming a plurality of wafers by slantly slicing the single crystal ingot as much as the certain degrees of an angle(&thgr;2).