发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND TEST METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To compare a negative power source voltage generated by a power source tuning circuit with a comparison potential for decision in a semiconductor integrated circuit device. SOLUTION: This semiconductor integrated circuit device has the power generation circuit 10 including fuses blown to generate a required internal voltage and generating a pseudo internal power source voltage by realizing a pseudo blow state of the fuses in response to a tuning signal. A capacitor 7 and a switch circuit 9 convert the negative power source voltage VIN generated by the power generating circuit 10 into a positive potential, and a current mirror circuit 8 compares the converted positive potential with the prescribed comparison potential VA.
申请公布号 JP2002122636(A) 申请公布日期 2002.04.26
申请号 JP20000311645 申请日期 2000.10.12
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBASHI TOSHIO
分类号 G01R31/28;H01L21/822;H01L27/04;(IPC1-7):G01R31/28 主分类号 G01R31/28
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