SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technique which can cope with micronization of an element by reducing leakage current in a source/drain part of a MISFET for information transfer. SOLUTION: A gate electrode 9 of the MISFET Qs for information transfer in a memory cell forming region is constituted of a lamination film of a polycrystalline silicon film 9a and a W film 9b. Gate electrodes 9s of an N channel type MISFET Qn1 and P channel type MISFETs Qp1 and Qp2 in a peripheral circuit forming region are constituted of a lamination film of the polycrystalline silicon film 9a and a CoSi layer 20. The CoSi layer 20 is formed on sources and drains of these MISFETs and not formed on a source and a drain of the MISFET for information transfer. As a result, refreshing performance of a memory cell can be improved, and contact holes 27, 28 can be formed precisely on the CoSi layer 20.