发明名称 |
Semiconductor device and fabrication method therefor |
摘要 |
In a crystalline silicon film fabricated by a related art method, the orientation planes of its crystal randomly exist and the orientation rate relative to a particular crystal orientation is low. A semiconductor material which contains silicon as its main component and 0.1-10 atomic % of germanium is used as a first layer, and an amorphous silicon film is used as a second layer. Laser light is irradiated to crystallize the amorphous semiconductor films, whereby a good semiconductor film is obtained. In addition, TFTs are fabricated by using such a semiconductor film.
|
申请公布号 |
US2002043660(A1) |
申请公布日期 |
2002.04.18 |
申请号 |
US20010892225 |
申请日期 |
2001.06.25 |
申请人 |
YAMAZAKI SHUNPEI;MITSUKI TORU;KASAHARA KENJI;ASAMI TAKETOMI;TAKANO TAMAE;SHICHI TAKESHI;KOKUBO CHIHO |
发明人 |
YAMAZAKI SHUNPEI;MITSUKI TORU;KASAHARA KENJI;ASAMI TAKETOMI;TAKANO TAMAE;SHICHI TAKESHI;KOKUBO CHIHO |
分类号 |
G02F1/1362;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/1362 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|