| 摘要 |
PURPOSE: A method for fabricating a thin-film-transistor(TFT) substrate is provided to prevent an injection signal or image signal from being delayed, by forming a gate interconnection or data interconnection while using an Ag-based metal material layer having lower resistance than that of an Al-based metal material layer. CONSTITUTION: The gate interconnection(22,24,26) of a dual layer structure including the Ag-based metal material layer is formed on a substrate(10). A gate insulation layer(30) covering the gate interconnection is formed. A semiconductor layer is formed on the gate insulation layer. A data line crosses the gate line. A source electrode is in contact with one portion of the semiconductor layer. A drain electrode is in contact with the other portion of the semiconductor layer, corresponding to the source electrode. The drain interconnection includes the data line, the source electrode and the drain electrode. A passivation layer(70) covering the data interconnection(64,65,66) and the semiconductor layer is formed. A contact hole(72,74,76) exposing the drain electrode is formed in the passivation layer. A pixel electrode connected to the drain electrode is formed.
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