| 摘要 |
PROBLEM TO BE SOLVED: To provide a device simulation method excellent in precision and convergency. SOLUTION: Band-gap narrowing and ionization ratio of impurities of semiconductor in the equilibrium state are calculated. On the basis of the calculated ionization ratio in the equilibrium state, the Poisson equation and a moving charge equation of continuity are solved, and moving charge density which bears transport charges inside the semiconductor is calculated. On the basis of the calculated moving charge density, quasi-particle energy shift is considered, and the band-gap narrowing and the ionization ratio in the unequilibrium state are calculated. After that, it is determined whether the ionization ratio and the band-gap narrowing in the unequilibrium state have converged. Until the ionization ratio and the band-gap narrowing in the unequilibrium state converge, the Poisson equation and the moving charge equation of continuity are solved on the basis of the ionization ratio and the band-gap narrowing, and the moving charge density is calculated. On the basis of the calculated result, the band gap narrowing and the ionization ratio are calculated, and the processings are repeated.
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