发明名称 |
Two-step MOSFET gate formation for high-density devices |
摘要 |
A method of manufacturing a metal-oxide-semiconductor field effect transistor MOSFET device gate includes patterning and etching the mesa of a gate material. A dielectric layer is formed on the mesa and is planarized using chemical mechanical polishing (CMP). The active gate dimension is patterned and etched to form source and drain wells that extend down to an active area on either side of the MOSFET gate. In one further embodiment, the wells are filled with metal and the metal is planarized. The MOSFET device, in one embodiment, includes source and drain wells equally spaced from the active gate.
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申请公布号 |
US2002042183(A1) |
申请公布日期 |
2002.04.11 |
申请号 |
US20010983394 |
申请日期 |
2001.10.24 |
申请人 |
CHAN KEVIN K.;JONES ERIN C.;SOLOMON PAUL M. |
发明人 |
CHAN KEVIN K.;JONES ERIN C.;SOLOMON PAUL M. |
分类号 |
H01L21/285;H01L21/336;H01L21/60;H01L21/768;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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