| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high dielectric strength and reduced on resistance, by improving the structure of a drift area depleted in an off-state. SOLUTION: This semiconductor device has a p-type channel diffusion region 77 formed on an insulating film 6 on a semiconductor base 5, a trench gate electrode 111 formed on its sidewall across a gate insulating film 10, an n+-type source region 88 formed along its upper edge, an n+ drain region 99 formed at a distance from the electrode 111, a drain drift region 290 extending between the drain and gate, and a thick insulating film 12 formed thereupon. The drift region 290 is in superposition structure formed by laminating a plate type n-type divided drift path region 1 and a plate type p-type partition region 2 repeatedly by turns; and a p-type side end region 2a is formed directly below the bottom n-type divided drift path region 1 and a p-type side end region 2a is also formed above the top n-type divided drift path region 1. |
