发明名称 SEMICONDUCTOR MEMORY DEVICE INTERNALLY PROVIDED WITH LOGIC CIRCUIT WHICH CAN BE READILY CONTROLLED AND CONTROLLING METHOD THEREOF
摘要 PURPOSE: Semiconductor memory device internally provided with logic circuit is provided to realize a semiconductor memory device provided with a logic circuit capable of controlling a logic portion by a method similar to that used by a general purpose DRAM. CONSTITUTION: Semiconductor memory device(1) includes: a terminal for receiving control signals such as /RAS, /CAS, . . . , /CS, /WE; a terminal for receiving an address signal ADD; a terminal for receiving a data signal DATA; an interface portion(2) outputting to an internal portion a control signal in accordance with control signals /RAS, /CAS, . . . , /CS, /WE, address signal ADD. and data signal DATA; a DRAM receiving an output from interface portion(2) for operation; a register(6) holding data or command applied from interface portion(2); and a logic circuit(8) performing an operation such as signal processing in accordance with outputs from register(6) and interface portion(2). The terminals of semiconductor device(1) are only those used by a general purpose DRAM. Thus, the same package as that of a chip of the general purpose DRAM can be used.
申请公布号 KR20020025650(A) 申请公布日期 2002.04.04
申请号 KR20010030069 申请日期 2001.05.30
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KOZARU KUNIHIKO;YAMAUCHI TADAAKI
分类号 G11C11/407;G06F12/00;G06F12/02;G09C1/00;G11C7/10;G11C7/24;G11C8/00;G11C11/401;(IPC1-7):G11C8/00 主分类号 G11C11/407
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