| 摘要 |
The multilevel memory device (1) has a memory section containing cells (2a) that can be programmed with a predetermined number of levels greater than two, i.e. a multilevel array (2), and a memory section containing cells that can be programmed with two levels, i.e. a bilevel array (3). The multilevel array (2) is used for storing high density data, for which speed and reliability of reading are not essential, for example for storing the operation code of the system including the memory device. On the other hand, the bilevel array (3) is used for storing data for which high speed and reliability of reading is essential, such as the BIOS of personal computers, and the data to be stored in a cache memory. The circuitry parts dedicated to programming, writing of test instructions, and all the functions necessary for the operation of the memory device (1), are common to both arrays. <IMAGE>
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