| 摘要 |
A memory subsystem that includes a dynamic random-access memory (DRAM) having cells organized as an array of rows and columns, the cells being individually accessed by specifying a row address and a column address. An additional cell that stores a charge level is associated with each row of the DRAM. The charge level is characteristic of the charge level of the associated DRAM row, and is refreshed by a secondary or primary refresh cycle to the associated DRAM row. A threshold detector outputs a refresh signal when the charge of the additional cell drops below a predetermined threshold. Circuitry responsive to the refresh signal collects the row address of the additional cell and sends it to logic that generates a primary refresh cycle to the associated row address of the DRAM.
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