| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate electrode which can ensure full insulation margin by using a reflection prevention film, where an optical constant is adjusted to optimum value, and to provide a self-aligning contact formation method. SOLUTION: A antireflection film 27a, consisting of an oxynitride film, is formed on a conductive layer for gate electrode formation using plasma CVD method. Then, it is exposed to oxygen plasma with N-H bond on the surface of the oxide nitride film being terminated by oxygen. The antireflection film is left as it is in an etching process for forming a gate electrode. An etching process for forming a self-aligning contact is executed by using etching selectivity between the remaining antireflection film and a layer insulation film 31.
|
