| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to make compatible the positioning accuracy of an adhesive layer and the miniaturization of a semiconductor device due to a DBG(Dicing Before Grinding) method. CONSTITUTION: An adhesive layer(4) for adhering a die(13) cut out of a wafer(1) to the other member is formed on the surface of the wafer(1) where a desired integrated circuit is formed. To the wafer(1) with which a recessed groove(9) for separation is formed from the front side and the adhesive layer(4) is formed, film thinning treatment is applied from the back side until exposing the recessed groove(9). Since the adhesive layer(4) is formed on the wafer(1) before dividing into dies(13), namely, before back grinding, positioning accuracy in the formation of the adhesive layer(4) can be provided. On the other hand, since the adhesive layer(4) is formed on the surface of the wafer(1) where the desired integrated circuit is formed, back grinding can be applied to the back side where the circuit is not formed and the positioning accuracy of the adhesive layer(4) and the miniaturization of the semiconductor device due to the back grinding method can be made compatible.
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