发明名称 SUPPORT MATRIX FOR INTEGRATED SEMICONDUCTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a means for reliably blocking a flowing silicon material for isolating a support matrix from a semiconductor from creeping into a bonding region of bond leads. SOLUTION: The support matrix for an integrated semiconductor comprises a frame, a conductor path material, at least one bond lead (1) for connecting the conductor path material to the semiconductor, and a silicon material disposed on the support matrix for isolating the support matrix from the semiconductor. The bond lead has at least one groove (7, 8) between a bonding region (3) and the conductor path structure as a barrier to block the silicon material from flowing to the bonding region (3).
申请公布号 JP2002083906(A) 申请公布日期 2002.03.22
申请号 JP20010205045 申请日期 2001.07.05
申请人 INFINEON TECHNOLOGIES AG 发明人 KAHLISCH KNUT;MIETH HENNING
分类号 H01L23/32;H01L23/31;H01L23/495;(IPC1-7):H01L23/32 主分类号 H01L23/32
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