HIGH-FREQUENCY POWER AMPLIFIER

摘要

PROBLEM TO BE SOLVED: To provide a high-frequency power amplifier having higher performance by preventing characteristic deterioration or thermal runaways, due to heating of a high-frequency power amplifying element. SOLUTION: This high-frequency power amplifier, constituted of at least two semiconductor chips 3 and 7, is provided with a high frequency amplifying element 2 formed on one semiconductor chip 3 for amplifying an inputted high frequency power; and a bias circuit 4 whose at least one part is formed on the same semiconductor chip as that of the high-frequency power amplifying element for setting the operating point of the high-frequency power amplifying element, and is equipped with a reference voltage generating part 5 having the same temperature characteristics as those of the high-frequency power amplifying element.