| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a MOS transistor of such a structure to guarantee the resistance to punch-through and to provide good characteristics with respect to reduction in leakage current, and also to provide a method of manufacturing the same. SOLUTION: In addition to an ordinary MOS transistor structure, this semiconductor device is provided with a channel doped region 1 which is formed in a prescribed depth nearly over the whole flat surface in a P well region 22 including a channel region. The maximum value of the P type impurity density MAXofP of the channel doped region 1 is set between 1×1018 and 1×1019, and is between 10% and 100% of the maximum value of the N type impurity density MAXofN of a source and drain region 31 (32), except for a region near the surface of the P well region 22. |
