Method for post-oxidation heating of a structure comprising SiO2

摘要

The present invention is related to a method for post-oxidation heating of at least one substrate comprising at least a SiO2 layer or a SiO2/poly-Si layer structure, comprising the steps of: creating an inert gaseous ambient in a furnace, said ambient having a partial pressure within a predetermined range and said gaseous ambient comprising helium molecules, which have a suitable diameter for penetrating into the SiO2 and/or the poly-Si material; placing the substrate into said ambient; thereafter heating said furnace to a temperature of at least 200° C. for a predetermined period of time; cooling said furnace while maintaining said gaseous ambient in said predetermined pressure range in said furnace.