| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, which can stably supply bumps. SOLUTION: In the manufacturing method of the semiconductor device, a TiW film 23 of metal film 27 under the bump is etched with aqueous hydrogen peroxide, or a liquid mixture or a solution of aqueous hydrogen peroxide mixed with at least one kind of the inorganic base group represented by aqueous ammonium.
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