| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method capable of easily and finely forming a diode used for a charge pump circuit or the like. SOLUTION: A diode 20 and a capacitor 30 constituting EEPROM 10 and a charge pump circuit generating boosted voltage necessary in EEPROM 10 are formed on a semiconductor board 1. The polysilicon part 21 of the diode 10 is formed by etching the same polysilicon film as a floating gate 14 as thermal oxidation films 15, 24 are made masks. After an interlayer insulation film 50 is formed on the semiconductor board 1, contact holes 42, 44 are formed. An n-channel area 22 and a p-channel area 23 are formed by injecting mutually different impurities through the contact holes 42, 44.
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