| 摘要 |
PROBLEM TO BE SOLVED: To obtain a system and a method for producing a semiconductor having a trench of isolation structure in which reaction products do not adhere to the bottom of the trench. SOLUTION: A sequence 1 for controlling the high frequency power application timing of a high frequency power supply 7 for biasing a wafer 14 and a high frequency power supply 6 for exciting plasma is provided. Native oxide is sputtered with ion energy increased by applying high frequency power from the high frequency power supply 7 for biasing the wafer 14 and then high frequency power is applied from the high frequency power supply 6 for exciting plasma.
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