SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor laser element which has a projecting part and improves reliability. SOLUTION: An n-GaAs current block layer is formed in the areas on the side face of a ridge and the upper surface of the ridge above a window area on the first clad layer of p-AlGaInP. A projecting part 20 is formed on the cap layer of p-GaAs in the area close to the end face, and a projecting area 21 is formed in the area of a first electrode 10 close to the end face. A second electrode 11 having a thickness greater than the height of the projecting area 21 is formed on the area between the projecting areas 21 of the first electrode 10.