METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To manufacture a semiconductor device by applying damascene gate structure without damaging process matching in a semiconductor integrated circuit with a very large scale such as system LSI including device structure different in height such as a memory and a logic. SOLUTION: Interlayer insulating film etching back for exposing the head of a dummy gate is realized by using dry etching, instead of performing it by CMP like a conventional case in a damascene gate process. Since patterning by a resist mask becomes possible, only the arbitrary block of a logic area including damascene gate structure can selectively be etched back. Then, system LSI which mixedly loads a high device such as the stack capacitor of the memory can be manufactured.