| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a Josephson junction element, which can form a Josephson junction by ion implanting to utilize the knockout effect, without using a special focused ion beam machine or a high-precision XY stage. SOLUTION: A photoresist film 5 is applied by photolithography to a laminate Josephson junction element base composed of a lower electrode 1 formed on a substrate 7, a insulation layer 3 formed thereon and an upper electrode 2 formed thereon, except a Josephson junction forming portion, thus performing a masking process. A ion beam is radiated by an ion implanting apparatus and blocked by the photoresist film 5 on a masked portion but arrives at the insulation layer 3 or not applied window portions. The insulation layer thereon results in a low concentration region of nitrogen where a Josephson junction 4 in a weak electrical coupling condition is formed. |
