发明名称 |
Reverse conducting thyristor |
摘要 |
Providing a reverse conducting thyristor, wherein a diode and a GTO thyristor are reverse parallel-connected, with which it is possible to reduce a surface area size of a separation portion and avoid variations in insulation characteristics. A separation portion between a diode and a GTO thyristor includes a semiconductor substrate of a first conductivity type, a thin film region of a second conductivity type formed in a major surface of the semiconductor substrate, and a guard ring region of the second conductivity type.
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申请公布号 |
US2002030199(A1) |
申请公布日期 |
2002.03.14 |
申请号 |
US20010824090 |
申请日期 |
2001.04.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRANO NORITOSHI;YAMAGUCHI YOSHIHIRO;SATOH KATSUMI |
分类号 |
H01L29/744;H01L21/332;H01L21/822;H01L27/06;H01L29/74;(IPC1-7):H01L29/74;H01L31/111 |
主分类号 |
H01L29/744 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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