Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication

摘要

To remove nickel element after crystallization in fabricating a crystalline silicon film using nickel, a mask 106 is provided on a crystalline silicon film provided by using nickel and P (phosphor) is doped in respect of regions 107 and 109, thereafter, a heating treatment is carried out in an atmosphere including halogen element, in this case, nickel element is moved from a region 108 to the regions 107 and 109 and a thin film transistor is fabricated by utilizing the region 108 where nickel element has been removed.