发明名称 |
Device with asymmetrical channel dopant profile |
摘要 |
A method for fabricating a bit line junction in a DRAM array device which improves the doping profile in the channel region. The method includes contradoping via ion implantation through the bit line contact opening made in the device during processing. This particular doping method increases the concentration of dopants in the channel region on the bit line side of the array, without a corresponding increase of dopants on the buried strap side. Such a doping profile results in an improvement in the off current behavior of the device. Depending on the aspect ratio of the contact opening, tilt angles for the ion implantation are possible and can be adjusted for maximum off current efficiency.
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申请公布号 |
US6355954(B1) |
申请公布日期 |
2002.03.12 |
申请号 |
US19990251616 |
申请日期 |
1999.02.17 |
申请人 |
SIEMENS AKTIENGESELLSCAHFT |
发明人 |
GALL MARTIN;ALSMEIER JOHANN |
分类号 |
H01L21/768;H01L21/265;H01L21/334;H01L21/336;H01L21/8242;H01L27/108;H01L29/10;(IPC1-7):H01L21/108 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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