发明名称 METHOD OF DISASSEMBLING SEMICONDUCTOR SINGLE CRYSTAL PULLING DEVICE AND PIPING FOR EXHAUST GAS
摘要 PROBLEM TO BE SOLVED: To provide a method of disassembling a silicon single crystal pulling device, by which an activated silicon oxide accumulated in a piping for an exhaust gas can be made inert so as to prevent a small ignition at the time of cleaning work of the inside of the piping for the exhaust gas when the silicon single crystal pulling device is disassembled, and to provide a piping for the exhaust gas, whose inside can be easily cleaned. SOLUTION: The method of disassembling the silicon single crystal pulling device comprises introducing at least one time air into a chamber and/or the piping for the exhaust gas before disassembling the chamber, insulating the chamber from the outside, exhausting the introduced air, and disassembling the chamber. The piping for the exhaust gas is used in the silicon single crystal pulling device, and a leak valve is installed to the piping for the exhaust gas, and the whole body of the piping is formed using electro-conductive tubes and an earth is attached to the piping.
申请公布号 JP2002068888(A) 申请公布日期 2002.03.08
申请号 JP20000252610 申请日期 2000.08.23
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 TAKEYASU YUKINOBU;WAKABAYASHI ATSUMI;UESUGI TOSHIHARU;MORI TAKASHI
分类号 C30B29/06;C30B15/00;H01L21/208;(IPC1-7):C30B29/06 主分类号 C30B29/06
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