METHOD FOR FORMING CAPACITOR USING PHASE SHIFT MASK

摘要

PURPOSE: A method for forming a capacitor using a phase shift mask is provided to simplify a fabricating process and to increase charge storage capacity, by stacking a photoresist layer on a semiconductor substrate and by using a dual photoresist layer pattern. CONSTITUTION: An interpoly oxide layer(125) is stacked on the semiconductor substrate(120) having a predetermined lower structure, and a contact is formed by a masking etch process. A polysilicon layer and an anti-reflective coating(ARC) are stacked on the resultant structure to fill the inside of the contact. After a photoresist layer is stacked on the resultant structure, an exposure process using the phase shift mask is performed to form the dual photoresist layer pattern. The ARC and the polysilicon layer are sequentially etched to form the capacitor having a charge storage electrode by using the dual photoresist layer pattern as a mask.