| 摘要 |
<p>The inventive projection laser has a heterostructure in which a background impurity is maintained between confining doped underlayers of the maximal optical confinement which are nearest to an active layer, and in the active layer itself. The ratio between the P concentration of holes in said underlayer of the maximal optical confinement having the p-type conductivity, from the p-side and the N concentration of electrons in said underlayer of the maximal optical confinement having the n-type conductivity from the n-type (P/N ratio) is chosen such that it is greater than one, including the edges of a p-i-n space charge of a heterojunction. In addition, the edges of a p-i-n space charge of a heterojunction are arranged in the confining doped underlayers of the maximal optical confinement. The invention considerably increases the power output of single frequency transmitters, stabilises the temperature characteristics thereof and improves the efficiency and reliability of said transmitters.</p> |
