| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser device which can suppress generation of COD and can also suppress deterioration in electrode bonding property. SOLUTION: After electrodes have been formed on an upper and a lower face of a multilayered structure which is formed of a semiconductor material, the multilayered structure is cleaved to form end faces of a resonator. Then, a compound semiconductor is formed on each end face of the resonator by an epitaxial growth method, and then at least one of the electrodes is dry- etched, using preferably, Ar.
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