| 摘要 |
The closing plates (61b), (61c) are provided on the both end portions of the cylindrical insulator body (61a), the gas introduction tube for introducing a gaseous substance is inserted into one plate (61b) of the closing plates of the plasma chamber (61) for making the gaseous substance plasmatic within it, and on the other plate (61c), the plasma radiation outlet (61d) is provided. Then, nearby the plasma jet (63) outgoing from the radiation outlet, the electrode (64) for applying a high electric field of an ion trapper is provided so as to be opposed to the grounded electrode (65) interposed the plasma jet between them. This electrode for applying a high electric field is fixed on the grounded metal plate (61e) provided on the other plate (61c) via the insulation porcelain (66) made of MgO or quartz. As a result, a radical cell device which does not blow-off and mix up Al into the layer epitaxially grown is obtained, and a Groups II-VI compound semiconductor device because undoped Al is not contained in the semiconductor layers.
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