| 摘要 |
PURPOSE: A magneto-resistive element is provided to achieve magneto-resistive elements that are widely used, for example, in magnetic random access memory (MRAM) used in data communication terminals, and to manufacturing methods for the same. CONSTITUTION: A magneto-resistive element comprises an intermediate layer(102), a pair of magnetic layers(101,103) sandwiching the intermediate layer, wherein one of the magnetic layers is a free magnetic layer in which magnetization rotation with respect to an external magnetic field is easier than in the other magnetic layer, wherein the free magnetic layer is a multilayer film including at least one non-magnetic layer and magnetic layers sandwiching the non-magnetic layer, and wherein an element area, which is defined by the area of the intermediate layer through which current flows perpendicular to the film plane, is not larger than 1000μm. |
