发明名称 |
Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the same |
摘要 |
A ferromagnetic tunnel junction random access memory includes a ferromagnetic tunnel junction structure including a first ferromagnetic layer, a second ferromagnetic layer disposed adjacent to the first ferromagnetic layer and having a fixed magnetization, and a tunnel insulator layer interposed between the first and second ferromagnetic layers; a conductor plug penetrating the first ferromagnetic layer, the tunnel insulator layer and the second ferromagnetic layer along a center axis; a first selection line coupled to a first end of the conductor plug; and a second selection line coupled to a second end of the conductor plug opposite to the first end. The first ferromagnetic layer has a generally ring shape surrounding the conductor plug and is insulated from the conductor plug. One of the first and second ferromagnetic layers has an antiferromagnetic layer pattern on a portion thereof.
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申请公布号 |
US6351410(B1) |
申请公布日期 |
2002.02.26 |
申请号 |
US20000660940 |
申请日期 |
2000.09.13 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAKAO HIROSHI;YAMASHITA YOSHIMI;HORIGUCHI NAOTO |
分类号 |
G11C11/15;G11C11/155;H01F10/06;H01F10/32;H01L21/8246;H01L27/10;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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