SILICON-ON-INSULATOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A silicon-on-insulator(SOI) device is provided to control a floating body effect and reduce parasitic source/drain resistance by making an SOI region for forming a channel thinner than an SOI region for forming a source/drain and a body contact. CONSTITUTION: A semiconductor substrate(100) is prepared. A channel oxide layer(101) is formed in a predetermined portion of the substrate corresponding to the channel of the device. An SOI layer(104) is formed on the semiconductor substrate having the channel oxide layer by interposing a buried insulation layer(102). The channel, the source/drain(108) and the body contact(110) are formed on the SOI layer. The SOI layer in the channel is thinner than that in the source/drain and the body contact.