MEMORY CELL, MEMORY CELL DEVICE AND METHOD FOR THE PRODUCTION THEREOF

摘要

Each memory cell is a memory transistor which is provided with a gate electrode (2) on the upper surface of a semiconductor body. Said gate electrode is disposed in a trench between a source area (3) and a drain area (4) which are formed in the semiconductor material. The gate electrode is separated from the semiconductor material by dielectric material. A series of oxide nitride-oxide layers is disposed between the source area and the drain area and between the drain area and the gate electrode in order to capture charge carriers on the source and drain.