POSITIVE RESIST COMPOSITION AND BASE MATERIAL WITH RESIST LAYER OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a positive resist composition useful in a process with light having a shorter wavelength than KrF excimer laser light, e.g. F2 excimer laser light (157 nm) or EUV (extreme-ultraviolet radiation 13 nm) as a light source and capable of forming a resist pattern having high resolution and a good sectional shape and to provide a base material with a resist layer of the resist composition. SOLUTION: The positive resist composition contains (A) an alkali-soluble polysiloxane resin, (B) an acid generating agent comprising a compound which generates an acid when irradiated with radiation and (C) a compound having an acid dissociable group substituted for at least one of the hydrogen atoms of phenolic hydroxyl groups or carboxyl groups.