| 摘要 |
PROBLEM TO BE SOLVED: To respectively form a first semiconductor device, composed of a thick semiconductor layer and a second semiconductor device composed of a thin semiconductor layer on plural semiconductor layers laminated and formed on the same substrate. SOLUTION: A second alignment mark 409 for forming a second semiconductor device 412 is formed by a first alignment mark 404, used for forming a first semiconductor device 407 on a first semiconductor layer 402. After the first alignment mark 404 and a messa 408 under that mark are removed, the second semiconductor device 412, composed of a second semiconductor layer 403, is formed. |
