发明名称 |
Method of manufacture of a capacitor with a dielectric on the basis of strontium-bismuth-tantalum |
摘要 |
The crystallization temperature of a ferroelectric layer (3) (dielectric) for a storage capacitor can be lowered by applying a very thin CeO2 layer (2) to a first platinum electrode layer (1) of the storage capacitor before the ferroelectric layer is deposited. The dielectric layer (3) deposited in amorphous state is then crystallized by a temperature treatment step at a temperature in the range between 590° C. and 620° C. A second electrode layer (4) is then applied to complete the storage capacitor.
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申请公布号 |
US2002019108(A1) |
申请公布日期 |
2002.02.14 |
申请号 |
US20010781675 |
申请日期 |
2001.02.12 |
申请人 |
INFINEON TECHNOLOGIES, AG |
发明人 |
BACHHOFER HARALD;HARTNER WALTER;SCHINDLER GUENTHER;HANEDER THOMAS PETER;HOENLEIN WOLFGANG |
分类号 |
H01L21/02;H01L21/314;H01L21/316;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;(IPC1-7):H01L21/20;H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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