发明名称 Noise tolerant wide-fanin domino circuits
摘要 The invention involves a die having domino circuits. In some embodiments, at least some of the domino circuits include an output stage and a domino stage including a domino stage output node coupled to the output stage. The domino stage includes a wide-fanin evaluate network including the domino stage output node and at least one intermediate node. The domino stage has improved noise immunity and reduced leakage through reverse body biasing transistors in the evaluate network by raising voltage of the at least one intermediate node without static power consumption through the evaluate network. In other embodiments, at least some of the domino circuits include an output stage and a domino stage including a domino stage output node coupled to the output stage. The domino stage includes a wide-fanin evaluate network including the domino stage output node and wherein the domino stage further includes a diode transistor having a gate and an additional terminal connected to the domino stage output node. The diode transistor may resist leakage by operating in a subthreshold region to replenish charge on the domino stage output node and resists noise by turning on when small amounts of noise barely turn on transistors of the evaluate network.
申请公布号 US6346831(B1) 申请公布日期 2002.02.12
申请号 US19990408190 申请日期 1999.09.28
申请人 INTEL CORPORATION 发明人 KRISHNAMURTHY RAM K.;WANG LEI;HEGDE RAJAMOHANA
分类号 H03K19/096;(IPC1-7):H03K19/096;H03K19/094 主分类号 H03K19/096
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